Toshiba MG400Q1US41 IGBT Module

#MG400Q1US41 Description

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:400A

Collector current Icp:800A

Collector power dissipation Pc:2400W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque (Terminal:M4/M6/Mounting)2/3/3 N·m

High power switching applications.IGBT: 400A 1200V