#Toshiba, #MG400Q1US51, #IGBT_Module, #IGBT, MG400Q1US51 TOSHIBA GTR MODULESILICON N CHANNEL IGBT 1200V 520A
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
High Input Impedance
High Speed :tf=0.3μs(Max.) @Inductive Load
Low Saturation Voltage :VCE(sat) =3.6V (Max.)
Enhancement-Mode
The Electrodes are Isolated from Case.
Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :520A
Collector current Icp 1ms Tc=25°C :1040A
Collector current Ic Continuous Tc=80°C :400A
Collector current Icp 1ms Tc=80°C :800A
Collector power dissipation Pc:3000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.0~3.0 N·m