TOSHIBA MG400Q2YMS3 IGBT Module

MG400Q2YMS3 Product details

Applications

• High-Power Switching

• Motor Controllers

Features

(1) VDSS = 1200 V, ID = 400 A All SiC MOSFET Module(Low loss & High speed switching)

(2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in thermisteor.

(3) Enhancement mode.

(4) Electrodes are isolated from metal base plate.

Absolute Maximum Ratings (Note)(Tc = 25 � unless otherwise specified)

Drain-source voltage VDSS 1200V

Gate-source voltage VGSS +25/-10V

Drain current (DC) ID 400A

Drain current (pulsed) IDP 800A

Drain power dissipation PD 1350W

Channel temperature Tch +150°C

Storage temperature Tstg -40 to +150°C

Isolation voltage Viso 4000V

Mounting torque M5,M6 3.5,4.5 N·m