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TOSHIBA MG400Q2YS60 IGBT Module

MG400Q2YS60

#TOSHIBA, #MG400Q2YS60, #IGBT_Module, #IGBT, MG400Q2YS60 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MG400Q2YS60

· Categories: IGBT Module
· Manufacturer: TOSHIBA
· Price: US$
· Date Code: 11+
. Available Qty: 388
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MG400Q2YS60 Specification

Sell MG400Q2YS60, #TOSHIBA #MG400Q2YS60 Stock, MG400Q2YS60 Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-11; MG400Q2YS60, #IGBT_Module, #IGBT, #MG400Q2YS60
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Manufacturer Part Number: MG400Q2YS60APart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X11Pin Count: 11Manufacturer: Mitsubishi ElectricRisk Rank: 5.82Case Connection: ISOLATEDCollector Current-Max (IC): 400 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X11Number of Elements: 2Number of Terminals: 11Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3750 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: MOTOR CONTROLTransistor Element Material: SILICONVCEsat-Max: 2.8 V Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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