#TOSHIBA, #MG400V1US51, #IGBT_Module, #IGBT, MG400V1US51 Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7; MG400V1US51
Manufacturer Part Number: MG400V1US51APart Life Cycle Code: ObsoleteIhs Manufacturer: Mitsubishi ELECTRIC CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X7Pin Count: 7Manufacturer: Mitsubishi ElectricRisk Rank: 5.83Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 400 ACollector-Emitter Voltage-Max: 1700 VConfiguration: SINGLE WITH BUILT-IN FETGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 1Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2750 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 770 nsTurn-on Time-Nom (ton): 210 nsVCEsat-Max: 4.5 V Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7