Toshiba MG400V1US51A IGBT Module

MG400V1US51A Description

MG400V1US51A TRANS IGBT MODULE N-CH 1700V 400A

FEATURE

The electrodes are isolated from case.

Enhancement-mode

Integrates fault-signal output circuit in package.(Short-Circuit and Over-Current)

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1700V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :400A

Collector current Icp 1ms Tc=25°C :800A

Collector power dissipation Pc:2750W

Isolation Voltage VIsol (AC 1 minute) :4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3 N·m