Toshiba MG500Q1US1 IGBT Module

Toshiba #MG500Q1US1 High Power switching applications

. High Input Impedance

. High Speed :tf=0.5us(Max)

trr=0.5us(Max)

. Low Saturation Voltage: VEC(sat)=4.0V(Max)

. Enhancement-Mode

. The Electrodes are Isolated from Case.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:500A

Collector current Icp:1000A

Collector power dissipation Pc:2900W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque (Terminal:M4/M6/Mounting) 2/3/3 N·m