Toshiba MG50G6ES40 IGBT Module

MG50G6ES40 Features 

· Low VCE(sat)

· Compact package

· P.C. board mount

· Converter diode bridge, Dynamic brake circuit

Applications

· Inverter for motor drive

· AC and DC servo drive amplifier

· Uninterruptible power supply

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:280W

Collector-Emitter voltage VCES:1200V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2/3 *1 N·m

Toshiba IGBT-module 1200V/100A/280W