TOSHIBA MG50H1BS1 IGBT Module

MG50H1BS1

Features

· High Input Impedance

.High Speed

. Low saturation Voltage: Vce(sat)=5.0V(Max.)

.Enhancement-Mode

.The Electrodes are Isolated from Case.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:50A

Collector current Icp:100A

Collector power dissipation Pc:150W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Screw Torque (Termina1 / Mounting) 20/30 kg.cm