Sell MG50H2YS1, #TOSHIBA #MG50H2YS1 Stock, MG50H2YS1 is High Power Switching Application 500V 100A, #IGBT_Module, #IGBT, #MG50H2YS1
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Toshiba MG50H2YS1, which appears to be a power semiconductor device designed for high-power switching and motor control applications. Here's an explanation of the specifications and features:
Features:
High Input Impedance:- This indicates that the device has a high input impedance, which can make it easier to drive with low-power control signals.
High Speed:- Switching speed is critical in many applications. The specified values for tf (fall time) and trr (reverse recovery time) indicate fast switching characteristics.
- tf (fall time): 1.0μs (maximum)
- trr (reverse recovery time): 0.5μs (maximum)
Low Saturation Voltage:- VCE(sat) (Collector-Emitter saturation voltage) is specified as 5.0V (maximum). This indicates that the device exhibits low voltage drop when it's in the on state, which is important for minimizing power losses.
Enhancement-Mode:- Enhancement-mode typically refers to a type of field-effect transistor (FET) or power semiconductor device. It suggests that this device operates in an enhancement mode, where it's normally off and requires a gate signal to turn on.
Complete Half Bridge in One Package:- This device seems to include a complete half-bridge configuration in a single package. A half-bridge is a common configuration for driving motors and other loads.
Electrodes Isolated from Case:- This feature ensures that the electrical connections (electrodes) are electrically isolated from the device's case for safety and protection purposes.
Maximum Ratings and Characteristics:
Collector-Emitter Voltage (VCE): 500V- This is the maximum voltage that can be applied across the collector and emitter terminals.
Gate-Emitter Voltage (VGES): ±20V- This represents the maximum voltage range that can be applied across the gate and emitter terminals.
Collector Current (Ic):- DC (Continuous): 50A
- 1ms Pulsed: 100A
- These values indicate the maximum current that the device can handle under different operating conditions.
Collector Power Dissipation (PC): 300W- This is the maximum power dissipation the device can handle. Exceeding this rating can lead to overheating and damage.
Junction Temperature (Tj): 150°C- This is the maximum operating junction temperature for the device.
Storage Temperature Range (Tstg): -40°C to 125°C- These are the recommended storage temperature limits for the device when it's not in use.
Isolation Voltage (Visol): 2500V (AC, 1 Minute)- This represents the isolation voltage between different parts of the device and is important for safety and protection.
Screw Torque (Terminal/Mounting): 30/30 kg·cm- These values indicate the recommended torque for securing the device's terminals and mounting it.
