Toshiba MG50J1ZS40 IGBT Module

MG50J1ZS40 Product details

HIGH POWER SWITCHING APPLICATIONS.

MOTOR CONTROL APPLICATIONS.

High Input Impedance

High Speed: tf=0.35μs(Max.) trr=0.15μs(Max.)

Low Saturation Voltage:VCE(sat)=3.5V(Max.)

Enhancement-Mode

The Electrodes are Isolated from Case.

EQUIVALENT CIRCUIT

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:250W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 N·m