Toshiba MG50M2YK1 IGBT Module

MG50M2YK1 Description

Silicon NPN Triple Diffused Type(High Power Switching; Motor Control Applications); NPN transistor for high power switching and notor control applications; 1000V; 50A

Target_Applications

MG50M2YK1 could be used in (High Power Switching / Motor Control Applications)

Features

. The Collector is Isolation from Case.

. 2 Power Transistors and 2 Free Wheeling Diodes are Buit-in to 1 Package.

.High DC Current Gain: hFe=100(Min.)(Ic=50A)

. Low Saturation Voltage :VCE(sat)=2.5V(Max.)(Ic=50A)

Maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1000V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:350W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2~3 N·m