Mitsubishi MG50Q2YS50 IGBT Module

MG50Q2YS50 Description

MG50Q2YS50. High Power Switching Applications. Motor Control Applications

MG50Q2YS50  0.45 lbs

Target_Applications

MG50Q2YS50 could be used in High Power Switching / Motor Control Applications

Features

N Channel IGBT (High Power Switching / Motor Control Applications)

Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :50A

Collector current Icp 1ms Tc=25°C :100A

Collector power dissipation Pc:400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3/3 N·m