TOSHIBA MG600J1US51 IGBT Module

HIGH POWER SWITCHING APPLICATIONS.

MOTOR CONTROL APPLICATIONS.

● The Electrodes are Isolated from Case.

● High Input Impedance

● Enhancement-Mode

● High Speed : tr=0.30μs (Max.) (Ic= 600A);trr=0.15μus (Max.) Ir = 600A)

● Low Saturation Voltage: VCE (sat)=2.70V (Max.) (Ic= 600A )

● Outline : TOSHIBA 2-109E1A ; See page 3 for the device outline

Maximum Ratings (Tc=25°C)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :600A

Collector current Icp 1ms Tc=25°C :12000A

Collector power dissipation Pc:2200W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2~3 N·m