Toshiba MG600Q1US61 IGBT Module

MG600Q1US61 Product details

High Power Switching Applications, Motor Control Applications

● High input impedance

● High speed: tf = 0.3 µs (max)

Inductive load

● Low saturation voltage: VCE (sat) = 2.6 V (max)

● The electrodes are isolated from case.

● Enhancement-mode

Maximum Ratings (Tc=25°C)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :600A

Collector power dissipation Pc:5400W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.0 N·m