TOSHIBA MG600Q2YMS3 IGBT Module

MG600Q2YMS3 Product details

Applications

• High-Power Switching

• Motor Controllers (including rail traction)

Features

(1) VDSS = 1200 V, ID = 600 A All SiC MOSFET Module(Low loss & High speed switching)

(2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in temperature sensor.

(3) Enhancement mode.

(4) Electrodes are isolated from case.

.Absolute maximum ratings (Tc=25°C unless without specified)

Drain-source voltage VDSS 1200V

Gate-source voltage VGSS + 25/- 10V

Drain curent (DC) ID 600A

Drain current (pulsed) IDP 1200A

Drain power dissipation PD 2000W

Source current (DC) IS 600A

Source current (pulsed) ISP 1200A

Channel temperature Tch 150°C

Storage temperature Tstg -40~150°C

Isolation voltage Visol 4000V

Mounting screw torque M5 3.5 N·m