Toshiba MG75J6ES50 IGBT Module

MG75J6ES50 Description

MG75J6ES50, Silicon N-channel IGBT GTR module for high power switching; motor control applications; 75 Amp; 600 Volt

MG75J6ES50  2.13 lbs

Target_Applications

MG75J6ES50 could be used in HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS

Features

The Electrodes are Isolated from Case.

High Input Impedance.

6 IGBTs Built Into 1 Package.

Enhancement- Mode.

High Speed : tr=0.30μs (Max.) (Ic=75A),trr =0.15μs (Max.) (Ir=75A)

Low Saturation Voltage: VCE (sat)=2.70V (Max.) (IC=75A)

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :75A

Collector current Icp 1ms Tc=25°C :150A

Collector power dissipation Pc:390W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 2/3 N·m

Collector-Emitter Saturation Voltage VCE(sat) IC=75A,VGE=15V 2.1~2.7V