Toshiba MG75J6ES53 IGBT Module

HIGH POWER SWITCHING APPLICATIONS.

MOTOR CONTROL APPLICATIONS.

●The Electrodes are Isolated from Case.

●High Input Impedance.

●6 IGBTs Built Into 1 Package. .

●Enhancement-Mode.

●High Speed : tf=0.3Oμs (Max.) (Ic= 75A)

trr=0.15pμs (Max.) (p=75A)

●Low Saturation Voltage: VCE (sat)=2.70V (Max.) (Ic=75A)

Maximum ratings and characteristics

• Collector-Emitter Voltage (VCES): 600V
• Gate-Emitter Voltage (VGES): ±20V
• Collector Current (DC): 75A
• Collector Current (1ms pulse): 150A
• Forward Current (1ms pulse): 150A
• Collector Power Dissipation (Pc) at Tc = 25°C: 390W
• Junction Temperature (Tj): 150°C
• Storage Temperature Range (Tstg): -40°C to 125°C
• Isolation Voltage (VIsol) (AC for 1 minute): 2500V
• Screw Torque (Terminal/Mounting): 2/3 Nm