Microchip launched the industry’s most durable silicon carbide power solution, replacing silicon IGBT, now available in 1700V version

Today’s energy-efficient charging systems that power commercial vehicle propulsion systems, as well as auxiliary power systems, solar inverters, solid-state transformers, and other transportation and industrial applications rely on high-voltage switching power supplies. To meet these needs, Microchip Technology Inc. today announced the expansion of its silicon carbide product portfolio, launching a series of high-efficiency and high-reliability 1700V silicon carbide MOSFET die, discrete devices and power Modules.

Microchip’s 1700V silicon carbide technology is an alternative to silicon IGBTs. Since the loss of silicon IGBTs limits the switching frequency, previous technologies required designers to compromise on performance and use complex topologies. In addition, the size and weight of power Electronic systems have become bloated due to transformers, and the size can only be reduced by increasing the switching frequency.

The newly launched silicon carbide series products enable engineers to abandon IGBTs and switch to a two-level topology with fewer parts, higher efficiency, and simpler control schemes. Without switch restrictions, the size and weight of the power conversion unit can be greatly reduced, thereby freeing up space to build more charging stations, provide more space to carry paying passengers and goods, or extend heavy vehicles, electric buses and other batteries Drive the endurance and running time of commercial vehicles, all of which can reduce overall system costs.

Leon Gross, Vice President of Microchip’s Discrete Products Business Unit, said: “System developers in the transportation field are constantly being asked to accommodate more people and goods in vehicles that cannot grow larger. One of the best ways to help achieve this goal is By using high-voltage silicon carbide power devices, the size and weight of power conversion equipment can be greatly reduced. Applications in the transportation industry can also bring similar benefits to many other industry applications.”

The new product features include gate oxide stability. Microchip observed in repeated unclamped inductive switch (R-UIS) tests that even after extending to 100,000 pulses, the threshold voltage did not drift. The R-UIS test also showed excellent avalanche resistance and parameter stability, as well as the stability of the gate oxide, achieving reliable operation during the service life of the system. Anti-degradation body diodes using silicon carbide MOSFETs can eliminate the need for external diodes. The short-Circuit withstand capability comparable to that of an IGBT can withstand harmful electrical transients. In the junction temperature range of 0 to 175 degrees Celsius, compared to the more temperature-sensitive silicon carbide MOSFET, the flatter RDS(on) curve enables the power system to operate more stably.

Microchip through AgileSwitch^®The series of digital programmable gate drivers and various discrete and power modules simplify the adoption of technology in a standard and customizable form. These gate drivers help accelerate the development of silicon carbide from experiment to production.

Microchip’s other silicon carbide products include 700V and 1200V MOSFET and Schottky barrier diode series, which provide bare chips and various discrete and power module packages. Microchip combines in-house silicon carbide die production with low-inductance power packaging and digital programmable gate drivers to enable designers to create the most efficient, compact and reliable final product.

Microchip’s overall system solutions also include microcontrollers (MCU), analog and MCU peripherals, as well as communications, wireless and security technology products.

development tools

With Microchip’s MPLAB^® The Mindi™ simulation simulator compatible silicon carbide SPICE simulation model provides system developers with the resources to simulate switching characteristics before committing to hardware design. The Intelligent Configuration Tool (ICT) enables designers to model high-efficiency silicon carbide gate drivers for Microchip’s AgileSwitch® series of digital programmable gate drivers.

Supply

Microchip’s 1700V silicon carbide MOSFET die, discrete components and power modules are available for order now, with a variety of packaging options to choose from.

Keywords: MOSFET MCU IGBT

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