#Toshiba, #MIG200Q101H, #IGBT_Module, #IGBT, MIG200Q101H Toshiba intelligent power module silicon n channel IGBT 1200V 200A
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
● Integrates Inverter Power Circuits & Control Circuits (IGBT drive units, Protection units for Over-Current, Under-Voltage & Over Temperature) in One Package.
● The Electrodes are Isolated from Case.
● High Speed Type IGBT :
VCE (sat)=3.5V (Max.)
toff= 3.8pμs (Max.)
trr =0.24μs (Max.)
● Outline : TOSHIBA 2-121A1A
● Weight : 510g
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector power dissipation Pc:1600W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3 N·m