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Toshiba MIG20J902H IGBT Module

#Toshiba, #MIG20J902H, #IGBT_Module, #IGBT, Toshiba integrated gtr module 20A/600V/PIM/7U, High Power Switching Applications

· Categories: IGBT Module
· Manufacturer: Toshiba
· Price: US$ 35
· Date Code: 2022+
. Available Qty: 34
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MIG20J902H Specification

Sell MIG20J902H, #Toshiba #MIG20J902H Stock, Toshiba integrated gtr module 20A/600V/PIM/7U, High Power Switching Applications, #IGBT_Module, #IGBT, #MIG20J902H
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Toshiba MIG20J902H is new, high-quality, integrated GTR module. It designed for high-power switching applications, perfect for motor control applications base it integrates inverter, converter, and brake power circuits in one package.

MIG20J902H features: 20A/600V, high-speed type IGBT output (inverter stage), 30A/800V silicon rectifier input (converter stage). MIG20J902H was isolated from the case to ensure safe and reliable operating.

Toshiba MIG20J902H was designed with maximum ratings and characteristics, absolute maximum collector-emitter 600V voltage (Vces), gate-emitter voltage ±20V (VGES), collector current (Ic) continuous Tc=80°C of 20A, and collector current (Icp) 1ms Tc=80°C of 40A.

MIG20J902H has isolation voltage 2500V (VIsol) (AC 1 minute), operating junction temperature (Tj) +150°C.

Motor control applicatlons

. Integrates inverter, Converter and brake Power Circuits in one package.

. Output (inverter Stage): 20A /600V High Speed Type IGBT

. Input (Converter Stage) 30A /800V Silicon rectifier Vf= 1200V(Max)

. The Electrodes are Isolated from Caso.

Maximum ratings(Ta=25°C)

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :20A

Collector current Icp 1ms Tc=80°C :40A

Collector power dissipation Pc:80W

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3 N·m

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