IXYS MIO1200-33E10 IGBT Module

Manufacturer Part Number: MIO1200-33E10Pbfree Code: YesPart Life Cycle Code: Lifetime BuyIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-9Pin Count: 9Manufacturer: IXYS CorporationRisk Rank: 5.66Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 3300 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9