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Shunlongwei Co. ltd.

IGBT Module / LCD Display Distributor

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IXYS MIO1200-33E11 IGBT Module

MIO1200-33E11

#IXYS, #MIO1200_33E11, #IGBT_Module, #IGBT, MIO1200-33E11 Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9; MIO1200-33E11

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 11+
. Available Qty: 243
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MIO1200-33E11 Specification

Sell MIO1200-33E11, #IXYS #MIO1200-33E11 Stock, MIO1200-33E11 Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9; MIO1200-33E11, #IGBT_Module, #IGBT, #MIO1200_33E11
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mio1200-33e11.html

Manufacturer Part Number: MIO1200-33E11Pbfree Code: YesPart Life Cycle Code: Lifetime BuyIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: MODULE-9Pin Count: 9Manufacturer: IXYS CorporationRisk Rank: 5.66Case Connection: ISOLATEDCollector Current-Max (IC): 1200 ACollector-Emitter Voltage-Max: 3300 VConfiguration: COMPLEXJESD-30 Code: R-XUFM-X9Number of Elements: 3Number of Terminals: 9Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9

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