#IXYS, #MIXA10WB1200TML, #IGBT_Module, #IGBT, MIXA10WB1200TML Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25; MIXA10WB1200TML
Manufacturer Part Number: MIXA10WB1200TMLPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X25Pin Count: 25Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 17 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X25Number of Elements: 7Number of Terminals: 25Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 63 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 17A I(C), 1200V V(BR)CES, N-Channel, E1-PACK-25