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IGBT Module / LCD Display Distributor

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IXYS MIXA20W1200TML IGBT Module

MIXA20W1200TML

#IXYS, #MIXA20W1200TML, #IGBT_Module, #IGBT, MIXA20W1200TML Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MIXA20W1200TML

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1530
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MIXA20W1200TML Specification

Sell MIXA20W1200TML, #IXYS #MIXA20W1200TML Stock, MIXA20W1200TML Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; MIXA20W1200TML, #IGBT_Module, #IGBT, #MIXA20W1200TML
Email: sales@shunlongwei.com
URL: https://www.slw-ele.com/mixa20w1200tml.html

Manufacturer Part Number: MIXA20W1200TMLRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X24Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 5.65Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 28 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X24Number of Elements: 6Number of Terminals: 24Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 110 nsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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