#IXYS, #MIXA20WB1200TED, #IGBT_Module, #IGBT, MIXA20WB1200TED Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24; MIXA20WB1200TED
Manufacturer Part Number: MIXA20WB1200TEDPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X24Pin Count: 24Manufacturer: IXYS CorporationRisk Rank: 2.21Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 28 ACollector-Emitter Voltage-Max: 1200 VConfiguration: COMPLEXGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X24Number of Elements: 7Number of Terminals: 24Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 100 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, E2-PACK-24