#IXYS, #MIXA225RF1200TSF, #IGBT_Module, #IGBT, MIXA225RF1200TSF Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES,; MIXA225RF1200TSF
Manufacturer Part Number: MIXA225RF1200TSFRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPManufacturer: IXYS CorporationRisk Rank: 5.73Collector Current-Max (IC): 360 ACollector-Emitter Voltage-Max: 1200 VGate-Emitter Voltage-Max: 20 VNumber of Elements: 1Operating Temperature-Max: 150 °CPower Dissipation-Max (Abs): 1100 WSubcategory: Insulated Gate BIP TransistorsVCEsat-Max: 2.1 V Insulated Gate Bipolar Transistor, 360A I(C), 1200V V(BR)CES,