#Fairchild Semiconductor, #MJD3055TF, #IGBT_Module, #IGBT, MJD3055TF NPN Bipolar Power Transistor, 10 A, 60 V, 2000-REEL; MJD3055TF
Manufacturer Part Number: MJD3055TFBrand Name: ON SemiconductorPbfree Code: Lifetime BuyIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Manufacturer Package Code: 369AKECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: ON SemiconductorRisk Rank: 6.88Collector Current-Max (IC): 10 ACollector-Emitter Voltage-Max: 60 VConfiguration: SINGLEDC Current Gain-Min (hFE): 5JEDEC-95 Code: TO-252JESD-30 Code: R-PSSO-G2Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 20 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: SINGLETime NPN Bipolar Power Transistor, 10 A, 60 V, 2000-REEL