#ON Semiconductor, #MJH11019G, #IGBT_Module, #IGBT, MJH11019G 20 A, 200 V PNP Darlington Bipolar Power Transistor, TO-247, 30-TUBE; MJH11019G
Manufacturer Part Number: MJH11019GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: TO-218Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer Package Code: 340LECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 0.8Case Connection: COLLECTORCollector Current-Max (IC): 15 ACollector-Emitter Voltage-Max: 200 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 100JEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: PNPPower Dissipation-Max (Abs): 150 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime 20 A, 200 V PNP Darlington Bipolar Power Transistor, TO-247, 30-TUBE