#ON Semiconductor, #MMBTA13LT3G, #IGBT_Module, #IGBT, MMBTA13LT3G NPN Bipolar Darlington Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL; MMBTA13LT3G
Manufacturer Part Number: MMBTA13LT3GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SOT-23Package Description: SMALL OUTLINE, R-PDSO-G3Pin Count: 3Manufacturer Package Code: 318-08ECCN Code: EAR99HTS Code: 8541.21.00.75Manufacturer: ON SemiconductorRisk Rank: 0.91Collector Current-Max (IC): 0.3 ACollector-Emitter Voltage-Max: 30 VConfiguration: DARLINGTONDC Current Gain-Min (hFE): 10000JEDEC-95 Code: TO-236ABJESD-30 Code: R-PDSO-G3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPNQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime NPN Bipolar Darlington Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL