TOSHIBA MP6752 IGBT Module

High Power Switching Applications Motor Control Applications The electrodes are isolated from case. 6 IGBTs are built into 1 package. Enhancement−mode Low saturation voltage : VCE(sat) = 4.0V (max.) (IC = 20A) High speed: tf = 0.35µs (max.) (IC = 20A) trr = 0.15µs (max.) (IF = 20A) Collectoremitter voltage VCES 600 V Gate emitter voltage VGES ±20 V Collector current DC IC 20A-1ms ICP 40A Forward current DC IF 20-1ms IFM 40A Collector power dissipation (Tc = 25°C) PC 60 W Junction temperature Tj 150 °C Storage temperature range Tstg -40~125 °C Isolation voltage VIsol 2500 (AC 1 minute) V Screw torque ― 1.5 N･m Gate leakage current IGES VGE = ±20V, VCE = 0  ±20 µA Collector cut off current ICES VCE = 600V, VGE = 0 1.0 mA Gate emitter cut off voltage VGE(off) IC = 20mA, VCE = 5V  Collector emitter saturation voltage VCE(sat) IC = 20A, VGE = 15V High Power Switching Applications Motor Control Applications