#Freescale Semiconductor, #MRF8S26120HR3, #IGBT_Module, #IGBT, MRF8S26120HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET; MRF8S26120HR3
Manufacturer Part Number: MRF8S26120HR3Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: FLANGE MOUNT, R-CDFM-F2ECCN Code: 5A991HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 5.84Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: S BANDJESD-30 Code: R-CDFM-F2Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 225 °CPackage Body Material: CERAMIC, METAL-SEALED COFIREDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime S BAND, Si, N-CHANNEL, RF POWER, MOSFET