#Freescale Semiconductor, #MRFG35010, #IGBT_Module, #IGBT, MRFG35010 C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET; MRFG35010
Manufacturer Part Number: MRFG35010ANT1Rohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: NXP SEMICONDUCTORSPackage Description: SMALL OUTLINE, R-PQSO-N4ECCN Code: EAR99HTS Code: 8541.29.00.75Manufacturer: NXP SemiconductorsRisk Rank: 8.4Case Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 15 VFET Technology: HIGH ELECTRON MOBILITYHighest Frequency Band: C BANDJESD-30 Code: R-PQSO-N4JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 4Operating Mode: DEPLETION MODEOperating Temperature-Max: 175 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSubcategory: FET RF Small SignalSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: QUADTime C BAND, GaAs, N-CHANNEL, RF POWER, HEMFET