IR-Peri MTC110A1800V IGBT Module

Thyristor  Module Thyristor/Diode Module MECHANICAL DESCRIPTION The MT C, MFC module, combines the excellent t hermal performances obtained by the usa ge of exposed direct bonded copper subs trate, with advanced compact simple pac kage solution and simplified internal s tructure with minimized number of inter faces.

FEATURES

• High voltage

• In dustrial standard package

• Low therm al resistance

• Designed and qualified for industrial level

• Excellent th ermal performances obtained by the usag e of exposed direct bonded copper subst rate

• High surge capability

• Easy mounting on heatsink MTC110A1800V .

APPLICATIONS

These modules are intended for general purpose high voltage applications such as high voltage regulated

power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Collector-Emitter Voltage (VGE = 0V) VCES 1800 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, TC = 125°C)*2,*4 IC 110 Amperes

Collector Current (Pulse, Repetitive)*3 ICRM 220 Amperes

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 2500 Volts

Maximum Junction Temperature Tj(max) 175 °C

Maximum Case Temperature TC (max) 125 °C

Operating Junction Temperature Tj(op) -40 to +150 °C

Storage Temperature Tstg -40 to +125 °C