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ON Semiconductor MUN5331DW1T1G IGBT Module

MUN5331DW1T1G

#ON Semiconductor, #MUN5331DW1T1G, #IGBT_Module, #IGBT, MUN5331DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; MUN5331DW1T1G

· Categories: IGBT Module
· Manufacturer: ON Semiconductor
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 1660
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MUN5331DW1T1G Specification

Sell MUN5331DW1T1G, #ON Semiconductor #MUN5331DW1T1G Stock, MUN5331DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL; MUN5331DW1T1G, #IGBT_Module, #IGBT, #MUN5331DW1T1G
Email: sales@shunlongwei.com
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Manufacturer Part Number: MUN5331DW1T1GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPart Package Code: SC-70Package Description: SMALL OUTLINE, R-PDSO-G6Pin Count: 6Manufacturer Package Code: 419B-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.29Additional Feature: BUILT-IN BIAS RESISTOR RATIO 1Collector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 8JESD-30 Code: R-PDSO-G6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: NPN AND PNPPower Dissipation-Max (Abs): 0.385 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL

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