#IXYS, #MWI450_12E9, #IGBT_Module, #IGBT, MWI450-12E9 Insulated Gate Bipolar Transistor, 640A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29; MWI450-12E9
Manufacturer Part Number: MWI450-12E9Pbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X17Pin Count: 29Manufacturer: IXYS CorporationRisk Rank: 5.83Case Connection: ISOLATEDCollector Current-Max (IC): 640 ACollector-Emitter Voltage-Max: 1200 VConfiguration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 Code: R-XUFM-X17JESD-609 Code: e3Number of Elements: 6Number of Terminals: 17Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Finish: Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 640A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-29