#IXYS, #MWI450_17E9, #IGBT_Module, #IGBT, MWI450-17E9 Insulated Gate Bipolar Transistor, 540A I(C), 1700V V(BR)CES, N-Channel, MODULE-29; MWI450-17E9
Manufacturer Part Number: MWI450-17E9Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: MODULEPackage Description: FLANGE MOUNT, R-XUFM-X29Pin Count: 29Manufacturer: IXYS CorporationRisk Rank: 5.72Case Connection: ISOLATEDCollector Current-Max (IC): 540 ACollector-Emitter Voltage-Max: 1700 VConfiguration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X29JESD-609 Code: e3Number of Elements: 6Number of Terminals: 29Operating Temperature-Max: 125 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2200 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 540A I(C), 1700V V(BR)CES, N-Channel, MODULE-29