#IXYS, #MWI75_06A7T, #IGBT_Module, #IGBT, MWI75-06A7T Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19; MWI75-06A7T
Manufacturer Part Number: MWI75-06A7TPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-XUFM-X13Pin Count: 19Manufacturer: IXYS CorporationRisk Rank: 2.23Additional Feature: UL RECOGNIZEDCase Connection: ISOLATEDCollector Current-Max (IC): 90 ACollector-Emitter Voltage-Max: 600 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X13JESD-609 Code: e3Number of Elements: 6Number of Terminals: 13Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 280 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, SIXPACK-19