#ON Semiconductor, #NJVMJD47T4G, #IGBT_Module, #IGBT, NJVMJD47T4G 1.0 A, 250 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL; NJVMJD47T4G
Manufacturer Part Number: NJVMJD47T4GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PSSO-G2Pin Count: 3Manufacturer Package Code: 369CECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 1.42Case Connection: COLLECTORCollector Current-Max (IC): 1 ACollector-Emitter Voltage-Max: 250 VConfiguration: SINGLEDC Current Gain-Min (hFE): 10JESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 15 WSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: SINGLETime 1.0 A, 250 V High Voltage NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL