#ON Semiconductor, #NSBC114TF3T5G, #IGBT_Module, #IGBT, NSBC114TF3T5G NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL; NSBC114TF3T5G
Manufacturer Part Number: NSBC114TF3T5GBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-F3Pin Count: 3Manufacturer Package Code: 524AAECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.72Additional Feature: BUILT IN BIAS RESISTORCollector Current-Max (IC): 0.1 ACollector-Emitter Voltage-Max: 50 VConfiguration: SINGLE WITH BUILT-IN RESISTORDC Current Gain-Min (hFE): 160JESD-30 Code: R-PDSO-F3JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: NPNPower Dissipation-Max (Abs): 0.297 WQualification Status: Not QualifiedSubcategory: BIP General Purpose Small SignalSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: FLATTerminal Position: DUALTime NPN Bipolar Digital Transistor (BRT), SOT-1123, 1.0x0.6x0.37, 0.35P, 8000-REEL