NSREC: 40V rad-hard GaN power transistors for space

EPC7001 has 4mΩ on-resistance, 60A (250A 300µs pulse 25°C) capacity and occupies 7mm²

EPC7002 turns on to 14.5mΩ and can handle 10A (62A 300µs pulse 25°C) through its 1.87mm² footprint

“EPC’s rad hard devices exhibit superior resistance to radiation compared to traditional silicon solutions,” said EPC. “Both new devices have a total dose radiation rating greater than 1,000k Rad(Si) and SEE immunity for LET of 83.7MeV/mg/cm² with Vds up to 100% of rated breakdown.”

The sizes above are for chip-scale packaging (photo, inset), with 95% Pb 5% Sn solder. Packaged versions are available from sister company EPC Space.

The larger package (60A part) has a junction-to-case thermal resistance of 0.8°C/W, and the smaller one 3.6°C/W.

Gates on both can cope with -4 and +6V max, and are intended to be driven at 5V, where leakage is typically 200μV at 125°C (3mA max) for the 60A part and 60μV (3mA max) for the 10A one.

Total gate charges are typically 11nC (30A 5Vg 20Vd), or 2.9nC (10A) for the smaller device.

Applications are foreseen in dc-dc power converters, motor drives, lidar, and ion thrusters. “They are particularly well-suited for satellites operating in both low earth orbit and geosynchronous Orbit, as well as avionics systems,” said EPC.

Engineering samples are available.

EPC Space will be at NSREC 2023 24 – 28 July (stand 314) in Kansas City Missouri, and you can view the devices now on their product pages: EPC7001 or EPC7002