ON Semiconductor NTTD1P02R2G IGBT Module

Manufacturer Part Number: NTTD1P02R2GRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8Manufacturer Package Code: CASE 846A-02ECCN Code: EAR99Manufacturer: ON SemiconductorRisk Rank: 5.81Additional Feature: LOGIC LEVEL COMPATIBLEConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 1.45 ADrain Current-Max (ID): 1.45 ADrain-source On Resistance-Max: 0.16 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 0.5 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Tin (Sn)Terminal Form: GULL WINGTerminal Position: DUALTime 1450mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8