IR P405W IGBT Module

Features

.Glass passivated junctions for greater reliability

. Electrically isolated base plate

. Available up to 1200 VRRM, VDRM

. High dynamic characteristics

.Wide choice of circuit configurations

.Simplified mechanical design and assembly

Description

The P405W series of Integrated Power Circuits con-sists of power thyristors and power diodesconfigured in a single package. With its isolatingbase plate, mechanical designs are greatly simpli-fied giving advantages of cost reduction andreduced size.Applications include power supplies, control cir-cuits and battery charger.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:40A

Collector current Icp:80A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C