#NIEC, #PD10M440H, #IGBT_Module, #IGBT, PD10M440H Power Field-Effect Transistor, 75A I(D), 500V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconduc
FEATURES
* Dual MOSFETs Cascaded Circuit
* Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel
* 300KHz High Speed Switching Possible
TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating
Manufacturer Part Number: PD10M440H
Part Life Cycle Code: Active
Package Description: FLANGE MOUNT, R-XUFM-X7
Absolute maximum ratings (Tc=25°C unless without specified)
Drain-Source Voltage (VGS=0V) VDSS 500V
Gate - Source Voltage VGSS ±20V
Continuous Drain Current Duty=50% IC 85 A
Continuous Drain Current D.C Icm 170 A
Total Power Dissipation Pc 730W
Operating Junction Temperature Range Tjw-40 to +150 °C
Storage Temperature Range Tstg-40 to +125 °C
Isolation Voltage Terminals to Base AC, 1 min.) VISO 2000 V
Mounting Torque Module Base to Heatsink FTO 30 N.m