Fuji PD10M44OH7B06 IGBT Module

#PD10M44OH7B06 FEATURES

* Dual MOSFETs Cascaded Circuit

*  Prevented  Body  Diodes  of  MOSFETs  bySBDs,   and   Ultra   Fast   Recovery   Diodes Connected in Parallel

* 300KHz High Speed Switching Possible   TYPICAL APPLICATIONS

* Power Supply for the Communications and  the Induction Heating

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current Ic:85A

Collector current Icp:800A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

IGBT Module Dual 85A 450V/500VDual