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STMicroelectronics PD57002-E IGBT Module

PD57002-E

#STMicroelectronics, #PD57002_E, #IGBT_Module, #IGBT, PD57002-E 2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57002-E

· Categories: IGBT Module
· Manufacturer: STMicroelectronics
· Price: US$
· Date Code: Lead free / RoHS Compliant
. Available Qty: 733
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PD57002-E Specification

Sell PD57002-E, #STMicroelectronics #PD57002-E Stock, PD57002-E 2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package; PD57002-E, #IGBT_Module, #IGBT, #PD57002_E
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Manufacturer Part Number: PD57002-EBrand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: PLASTIC, POWERSO-10RF, 2 PINPin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.59Additional Feature: HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 0.25 ADrain Current-Max (ID): 0.25 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 4.75 WPower Gain-Min (Gp): 15 dBQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: DUALTime 2W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package

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