ST PD57006STR-E IGBT Module

Features

• Excellent thermal stability
• Common source configuration
• POUT = 6 W with 15dB gain @ 945 MHz / 28 V
• New RF plastic package

Description:

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Maximum ratings.Absolute maximum ratings (TCASE = 25°C)

• V(BR)DSS Drain-source voltage 65V
• VGS Gate-source voltage ± 20V
• ID Drain current 1A
• PDISS Power dissipation (@ TC = 70°C) 20W
• TJ Max. operating junction temperature 165°C
• TSTG Storage temperature -65 to +150°C
• POUT VDD = 28V, IDQ = 70mA, f = 945 MHz 6W