STMicroelectronics PD85006TR-E IGBT Module

Manufacturer Part Number: PD85006TR-EBrand Name: STMicroelectronicsPart Life Cycle Code: ActiveIhs Manufacturer: STMICROELECTRONICSPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-G2Pin Count: 10ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 5.65Additional Feature: HIGH RELIABILITYCase Connection: SOURCEConfiguration: SINGLEDS Breakdown Voltage-Min: 40 VDrain Current-Max (Abs) (ID): 2 ADrain Current-Max (ID): 2 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 3Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 165 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 250Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 36.5 WSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn) - annealedTerminal Form: GULL WINGTerminal Position: DUALTime 6W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package