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NIEC PDMB150B12 IGBT Module

PDMB150B12

#NIEC, #PDMB150B12, #IGBT_Module, #IGBT, PDMB150B12 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel,; PDMB150B12

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 342
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PDMB150B12 Specification

Sell PDMB150B12, #NIEC #PDMB150B12 Stock, PDMB150B12 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel,; PDMB150B12, #IGBT_Module, #IGBT, #PDMB150B12
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Manufacturer Part Number: PDMB150B12Part Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: KYOCERA CorporationRisk Rank: 5.13Case Connection: ISOLATEDCollector Current-Max (IC): 150 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 730 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel,

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