#NIEC, #PDMB300A6C, #IGBT_Module, #IGBT, PDMB300A6C Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,; PDMB300A6C
Manufacturer Part Number: PDMB300A6CPart Life Cycle Code: ObsoleteIhs Manufacturer: NIHON INTER electronicS CORPPackage Description: FLANGE MOUNT, R-XUFM-X7Manufacturer: Nihon Inter Electronics CorporationRisk Rank: 5.84Case Connection: ISOLATEDCollector Current-Max (IC): 300 ACollector-Emitter Voltage-Max: 600 VConfiguration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X7Number of Elements: 2Number of Terminals: 7Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 600 nsTurn-on Time-Nom (ton): 400 ns Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,